KGD Die Level Test Handler

IGBT/SiC KGD Die Level Test Handler

  • Die level testing capability
    (□ 0.3mm – □ 20 mm, up to 3 test sites)
  • Room temperature to 200°C
    (± 3°C)
  • Output to wafer ring or waffle tray
  • High voltage and high current test capability
    (up to 6KV, 3KA)
  • High contact accuracy
    (± 10 ㎛, tilt <0.05°)
  • Option for AOI integration
  • TCP-IP/GPIB/E84/SECS-GEM
Items Specification

Applications

IGBT/ SiC

Input

6/8/12” Wafer Ring

Output

6/8/12” Wafer Ring /2,4” Wafer Tray/Tape & Reel (Option)

Die Size

0.3 x 0.3mm – 20 x 20mm

Die Thickness

>60 µm (Option: 20 µm)

Accuracy for contact

X,Y < ± 10 µm; tilt <0.05°

Test Station

2 stations support/3 stations (Option)

UPH

1200 units (Dry Run)

Contact

Micro Chuck / Probe Card

Docking

Hard dock

Temperature

Ambient to 200°C (± 3°C)

Heating

Pre-Heat Station

N2 Heating Up to 200°C

Communication

TCP-IP/GPIB/E84/SECS-GEM

Bins

Wafer mapping / 10 hard bins (Stack Tray)

Picker

Nozzle Head Auto Conversion, with Force Control System, 0.5-5N
360° IC Rotation Support

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